%0 Report
%4 sid.inpe.br/mtc-m21c/2018/04.24.14.26
%2 sid.inpe.br/mtc-m21c/2018/04.24.14.26.36
%@ INPE-1862-RPE/212
%T The hubbard model for the disordered systems: in application to the specific heat of the phosphorus-doped silicon
%D 1980
%9 RPQ
%P 27
%A Silva, Antonio Ferreira da,
%A Kishore, Ram,
%A Lima, Ivan Costa da Cunha,
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%I Instituto Nacional de Pesquisas Espaciais
%C São José dos Campos
%K disordered systems, doped semiconductors, specific heat.
%X A self consistent many body theory of the disordered systems, described by the Hubbard Hamiltonian with random transfer integral, is deve loped. The rondam nature of the system is taken into account by the Matsubara-Toyozawa theory of impurities insemiconductors. By considering the hidrogen like impurity states, the electronic specific heat of the uncompensated phosphorus doped silicon is calculated and compared with the experimental results. It is found that it agrees well with the experiment in the entire semiconductor to the dilute metal lic region.
%@language en